26. Deutsche Physikerinnentagung 2022 (German Conference of Women in Physics)

Session

Physics Talks - Solid State Experiment

19

Nov 25, 2022, 4:30 PM

FTU Aula (KIT Campus North)

30. Highly-sensitive photodetachment spectroscopy in an MR-ToF device

Franziska Maier (ISOLDE/CERN & University Greifswald/Germany)

11/25/22, 4:30 PM

Physics talks

Talk

The electron affinity (EA) reflects the released energy when an electron is attached to a neutral atom. An experimental determination of this quantity can serve as an important benchmark for atomic models describing electron-correlation effects [1]. A comprehensive understanding of these effects is also necessary for accurate calculations of the specific mass shift, which is required to...

80. Highly crystalline $\text{In}_2\text{S}_3$ thin films epitaxially grown on sapphire substrates: A potential candidate for intermediate band solar cells

Ms Tanja Jawinski (Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik)

11/25/22, 4:45 PM

Physics talks

Talk

The Shockley Queisser limit of single junction solar cells can be overcome by introducing an intermediate band (IB) in wide band gap materials. Thus thermalization losses can be reduced [1]. Furthermore sub-bandgap photons can be absorped by valence band to IB and IB to conduction band transitions. According to theoretical calculations $\text{In}_2\text{S}_3$ hyper-doped with vanadium is a...

74. Increasing System Efficiency and Functionality of Microelectronics: Multipurpose Group IV alloys

Mrs Agnieszka Anna Corley-Wiciak (IHP – Leibniz-Institut für innovative Mikroelektronik)

11/25/22, 5:00 PM

Physics talks

Talk

Microelectronics is a core of world technology, touching every aspect of modern life. After decades of downscaling being the technology driver, this has been replaced in recent years by energy efficiency and increased functionality. In particular, the integration with photonics by adding optical devices such as waveguides, modulators, detectors, and lasers, has been aimed for. Moreover, the...

94. Electrical active defects caused by threading dislocations in Ge-rich GeSi heterostructures integrated on Si(001)

Henriette Tetzner (IHP GmbH)

11/25/22, 5:15 PM

Physics talks

Talk

Ge-based devices have numerous applications in the field of photonics and optoelectronics. These include Ge as alternative channel material for high-performance MOSFETs [1], as near-infrared integrated light sources [2] and as active material for THz quantum cascade lasers (QCL) [3]. A CMOS-compatible fabrication requires the integration of Ge-based heterostructures on Si substrates. In this...

99. Substrate Influence on the Fano coupling of bright-dark modes in THz plasmonic n-doped Ge antennas

Mrs Elena Hardt (IHP - Leibniz Institut für innovative Mikroelektronik)

11/25/22, 5:30 PM

Physics talks

Talk

A complementary metal-oxide-semiconductor (CMOS) -compatible Germanium (Ge)/Silicon (Si) system holds the promise for compact, low-cost and simple connection to on-chip data storage, processing and/or communication systems based on mainstream Si-based microelectronics. At terahertz (THz) frequencies, the plasmonic properties of n-doped Ge enable localized surface plasmon resonances (LSPR) in...

29. Design of Multilayer Stacks for Use as a Selective Emitter in a Thermophotovoltaic System

Ms Maria Masood (IHP microelectronics)

11/25/22, 5:45 PM

Physics talks

Talk

In a thermophotovoltaic (TPV) system, the photons radiated from a thermal emitter are converted into electrical power with the help of a photovoltaic cell. These systems are good for remote power generation, deep-sea applications, in space, and in utilizing solar heat, or heat wasted from other power generation plants, for example. A selective emitter is the best choice for the thermal...